The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB951
View detailed images (12)

2SB951

SKU: 2SB951
2SB951 Transistor Silicon PNP CASE: SOT186 MAKE: Matsushita Electronics
Datasheet
2SB951 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186
Manufacturer Matsushita Electronics
Vbr CEO 60
Max. PD (W) 45
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
Derate Above 25°C 360m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 343752
Back