2SB953

SKU: 2SB953

2SB953 Transistor Silicon PNP CASE: TO220F MAKE: Matsushita Electronics

Datasheet

2SB953 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220F
Manufacturer	Matsushita Electronics
Vbr CBO	40
Vbr CEO	20
Max. PD (W)	30
Derate (Amb) (W/°C)	280m
Max. hFE	260
Min hFE	60
Ic Max. (A)	7.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Tr Max. (s)	500n
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	75 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	343755

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