2SB956

SKU: 2SB956

2SB956 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics

Datasheet

2SB956 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	20
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	360
Min hFE	90
Ic Max. (A)	1.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	165 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	343760

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