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2SB966
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2SB966

SKU: 2SB966
2SB966 Transistor Silicon PNP - CASE: TO3P MAKE: NEC
Price: £4.79
+ VAT 20% for UK purchases
£4.79
Qty
+ VAT 20% for UK purchases
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Datasheet
2SB966 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO3P
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 80
Max. hFE 320
Min hFE 60
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Polarity PNP
Trans. Freq (Hz) Min. 65M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 80776
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