2SB967

SKU: 2SB967

2SB967 Transistor Silicon PNP CASE: TO252 MAKE: Matsushita Electronics

Datasheet

2SB967 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO252
Manufacturer	Matsushita Electronics
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	20
Derate (Amb) (W/°C)	160m
Max. hFE	625
Min hFE	90
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	120M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	343764

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