The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB97

2SB97

SKU: 2SB97
2SB97 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 18
Max. PD (W) 40m
Derate (Amb) (W/°C) 769u
hfe 70
Ic Max. (A) 5.0m
Icbo Max. @Vcb Max. (A) 14u
Polarity PNP
@VCE (test) (V) 6.0i
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.04 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.005 A
Max. Operating Junction Temperature (Tj) 75 °C
Forward Current Transfer Ratio (hFE), MIN 70
SKU 766626
Back