| Type | Transistor Germanium PNP | |
| Case | TO1 | |
| Manufacturer | Toshiba | |
| Vbr CBO | 18 | |
| Max. PD (W) | 40m | |
| Derate (Amb) (W/°C) | 769u | |
| hfe | 70 | |
| Ic Max. (A) | 5.0m | |
| Icbo Max. @Vcb Max. (A) | 14u | |
| Polarity | PNP | |
| @VCE (test) (V) | 6.0i | |
| Oper. Temp (°C) Max. | 75 | |
| @Ic (A) | 1.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.04 W | |
| Maximum Collector-Base Voltage |Vcb| | 18 V | |
| Maximum Emitter-Base Voltage |Veb| | 12 V | |
| Maximum Collector Current |Ic max| | 0.005 A | |
| Max. Operating Junction Temperature (Tj) | 75 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 70 | |
| SKU | 766626 | |