| Type | Transistor Silicon PNP | |
| Case | SOT23 | |
| Manufacturer | Hitachi | |
| Vbr CEO | 10 | |
| Max. PD (W) | 150m | |
| hfe | 100 | |
| Ic Max. (A) | 500m | |
| Polarity | PNP | |
| @VCE (test) (V) | 1.0 | |
| @Ic (A) | 100m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.75 W | |
| Maximum Collector-Base Voltage |Vcb| | 7 V | |
| Maximum Emitter-Base Voltage |Veb| | 8 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 165 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 200 | |
| SKU | 542470 | |