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2SB979
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2SB979

SKU: 2SB979
2SB979 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Matsushita Electronics
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 200
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SKU 766622
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