2SB987

SKU: 2SB987

2SB987 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics

Datasheet

2SB987 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	330
Min hFE	90
Ic Max. (A)	500m
@Ic (test) (A)	150m
Polarity	PNP
Trans. Freq (Hz) Min.	250M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	165 °C
Transition Frequency (ft):	125 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	343768

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