2SB998

SKU: 2SB998

2SB998 Transistor Silicon PNP CASE: TO126 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Toshiba
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
Max. hFE	15k
Min hFE	2.0k
Ic Max. (A)	7.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Tr Max. (s)	800n
Oper. Temp (°C) Max.	140
@VCE (V)	3.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	6000
SKU	766601

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