The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC1006
View detailed images (4)

2SC1006

SKU: 2SC1006
2SC1006 Transistor Silicon NPN CASE: TO18 MAKE: NEC
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer NEC
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 300m
C(ob) (F) 10p
Derate (Amb) (W/°C) 2.4m
hfe 600
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 600
SKU 394936
Back