2SC1022

SKU: 2SC1022

2SC1022 SemiConductor - Case: TO129 Make: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO129
Manufacturer	Mitsubishi
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	60
Min hFE	5.0
Ic Max. (A)	6.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	500M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	4-32
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	400 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	766574

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