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2SC105
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2SC105

SKU: 2SC105
2SC105 Transistor Silicon NPN CASE: TO18 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 250m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 1.7m
hfe 60
Ic Max. (A) 80m
Icbo Max. @Vcb Max. (A) 5n
Polarity NPN
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.08 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 584665
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