| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO220 |
| Manufacturer |
National Semiconductor - NSC |
| Vbr CBO |
50 |
| Vbr CEO |
50 |
| Max. PD (W) |
25 |
| Max. hFE |
320 |
| Min hFE |
35 |
| Ic Max. (A) |
3.0 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
NPN |
| R(sat) (Û) |
500m |
| Derate Above 25°C |
200m |
| Trans. Freq (Hz) Min. |
8.0M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
25 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
3 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SKU |
80863 |