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2SC107
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2SC107

SKU: 2SC107
2SC107 Transistor Silicon NPN CASE: TO8 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 15
t(f) Max. (S) 20n
Max. hFE 30-
Min hFE 7.5
Ic Max. (A) 1.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity NPN
Tr Max. (s) 25n
R(sat) (Û) 3.0
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 12
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 394953
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