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2SC109
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2SC109

SKU: 2SC109
2SC109 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 30
Max. PD (W) 600m
C(ob) (F) 12p
Derate (Amb) (W/°C) 4.0m
hfe 35
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 90.M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 366363
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