The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SC1101
View detailed images (13)

2SC1101

SKU: 2SC1101
2SC1101 Transistor - CASE: TO3 MAKE: NEC
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer NEC
Vbr CBO 1.1k
Vbr CEO 500
Max. PD (W) 50
Max. hFE 120
Min hFE 30
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 15
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1100 V
Maximum Collector-Emitter Voltage |Vce| 500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 556953
Back