| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO5 |
| Manufacturer |
Hitachi |
| Max. PD (W) |
750m |
| C(ob) (F) |
7.0p |
| Derate (Amb) (W/°C) |
8.3m |
| hfe |
35 |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
180M |
| @VCE (test) (V) |
2.0 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
200m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.75 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
25 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
14 pF |
| Transition Frequency (ft): |
80 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
35 |
| SKU |
542475 |