2SC1162

SKU: 2SC1162

2SC1162 Transistor Silicon NPN CASE: TO126 MAKE: Hitachi

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

Qty

Datasheet

2SC1162 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Hitachi
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	10
Ic Max. (A)	1.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	20u
Polarity	NPN
R(sat) (Û)	500m
Derate Above 25°C	80m
Trans. Freq (Hz) Min.	180M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	180 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	20156

Back