2SC1162B

SKU: 2SC1162B

2SC1162B Transistor Silicon NPN CASE: SOT32 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Hitachi
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	10
Max. hFE	120
Min hFE	60
Ic Max. (A)	2.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	20u
Polarity	NPN
Derate Above 25°C	6.0m
Trans. Freq (Hz) Min.	180M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	180 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	543385

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