| Type | Transistor | |
| Case | TO3 | |
| Manufacturer | Toshiba | |
| Vbr CBO | 1.2k | |
| Vbr CEO | 500 | |
| Max. PD (W) | 50 | |
| Max. hFE | 50 | |
| Min hFE | 10 | |
| Ic Max. (A) | 1.5 | |
| @Ic (test) (A) | 500m | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | NPN | |
| Derate Above 25°C | 400m | |
| Trans. Freq (Hz) Min. | 4.0M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 10 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 50 W | |
| Maximum Collector-Base Voltage |Vcb| | 1200 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 1.5 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 5 | |
| SKU | 394967 | |