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2SC1169
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2SC1169

SKU: 2SC1169
2SC1169 Transistor Silicon NPN CASE: MD34 MAKE: Toshiba
Datasheet
2SC1169 Datasheet
Product specifications
Type Transistor Silicon NPN
Case MD34
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 10
Min hFE 20
Ic Max. (A) 1.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
R(sat) (Û) 2.5
Derate Above 25°C 67m
Trans. Freq (Hz) Min. 600M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6.5 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 343778
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