2SC1170

SKU: 2SC1170

2SC1170 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Product specifications

Weight	0.01 kg
Equivalent	2SC1170B
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	1.2k
Vbr CEO	500
Max. PD (W)	50
Max. hFE	30
Min hFE	5.0
Ic Max. (A)	3.5
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Tr Max. (s)	1.0u
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1200 V
Maximum Collector-Emitter Voltage \|Vce\|	500 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	190 pF
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	84507

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