Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO220 |
Vbr CBO |
30 |
Vbr CEO |
25 |
Max. PD (W) |
10 |
Max. hFE |
400 |
Min hFE |
40 |
Ic Max. (A) |
3.0 |
@Ic (test) (A) |
500m |
Icbo Max. @Vcb Max. (A) |
10u |
Polarity |
NPN |
Derate Above 25°C |
80m |
Trans. Freq (Hz) Min. |
150M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
1.0 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
25 W |
Maximum Collector-Base Voltage |Vcb| |
45 V |
Maximum Collector-Emitter Voltage |Vce| |
30 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
3 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
300 pF |
Transition Frequency (ft): |
1 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
80868 |