| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Hitachi |
| Vbr CBO |
1.2k |
| Vbr CEO |
500 |
| Max. PD (W) |
50 |
| t(f) Max. (S) |
1.2u |
| Ic Max. (A) |
3.5 |
| Polarity |
NPN |
| R(sat) (Û) |
2.8 |
| Derate Above 25°C |
400m |
| Oper. Temp (°C) Max. |
140 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
50 W |
| Maximum Collector-Base Voltage |Vcb| |
1200 V |
| Maximum Collector-Emitter Voltage |Vce| |
700 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
3.5 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
2 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
4 |
| SKU |
115193 |