2SC1176

SKU: 2SC1176

2SC1176 Transistor Silicon NPN CASE: TO117 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO117
Manufacturer	Mitsubishi
Vbr CBO	40
Vbr CEO	18
Max. PD (W)	15
Min hFE	10
Ic Max. (A)	1.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	100m
Trans. Freq (Hz) Min.	450M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	300 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	552262

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