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2SC1196
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2SC1196

SKU: 2SC1196
2SC1196 Transistor Silicon NPN CASE: TO129 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO129
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 35
Max. PD (W) 10
Max. hFE 120
Min hFE 20
Ic Max. (A) 750m
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Derate Above 25°C 66m
Trans. Freq (Hz) Min. 800M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 14 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 766486
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