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2SC1200
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2SC1200

SKU: 2SC1200
2SC1200 Transistor Silicon NPN CASE: TO215 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO215
Manufacturer Toshiba
Vbr CBO 40
@Freq. (test) 2.0G
@Ic (A) 500m
Mat. Silicon Logic
Oper. Gain Typ (S21) 4.2
Oper. Pwr Out Typ. 1.0
f(osc) Max. (Hz) 2.0G
Polarity NPN
PD Max. (W) 2.5
S11 Deg. (Typ) 17.5
S11 Mag Typ. 5.0
S22 Deg. Typ. -32
S22 Mag Typ. 17.5
@VDS (VCE) (test) (V) 18
Coll. (or drain) Current Max. 180m
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 180 °C
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 585155
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