2SC1206B

SKU: 2SC1206B

2SC1206B Transistor Silicon NPN CASE: TO129 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Equivalent	2SC1206
Type	Transistor Silicon NPN
Case	TO129
Manufacturer	Mitsubishi
Vbr CBO	45
Vbr CEO	45
Max. PD (W)	30
Max. hFE	180
Min hFE	10
Ic Max. (A)	2.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	1.5G
Oper. Temp (°C) Max.	175
@VCE (V)	25
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	45 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	750 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	766474

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