The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC1208A
View detailed images (1)

2SC1208A

SKU: 2SC1208A
2SC1208A Transistor Silicon NPN CASE: TO129 MAKE: Mitsubishi
Product specifications
Equivalent 2SC1208
Type Transistor Silicon NPN
Case TO129
Manufacturer Mitsubishi
Vbr CBO 36
Vbr CEO 18
Max. PD (W) 60
Max. hFE 180
Min hFE 10
Ic Max. (A) 10
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 450M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 225 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 766469
Back