| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO129 |
| Manufacturer |
Toshiba |
| Vbr CBO |
40 |
| Vbr CEO |
20 |
| Max. PD (W) |
10 |
| Max. hFE |
50- |
| Min hFE |
10 |
| Ic Max. (A) |
1.5 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
20u |
| Polarity |
NPN |
| Derate Above 25°C |
66m |
| Trans. Freq (Hz) Min. |
400M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
4-32 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
1.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
22 pF |
| Transition Frequency (ft): |
200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
10 |
| SKU |
343784 |