Weight |
0.01 kg
|
Case |
TO92 |
Type |
Transistor Silicon NPN |
Manufacturer |
Hitachi |
Vbr CEO |
30 |
Max. PD (W) |
200m |
hfe |
250 |
Ic Max. (A) |
100m |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
230M |
@VCE (test) (V) |
12 |
@Ic (A) |
2.0m |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.2 W |
Maximum Collector-Base Voltage |Vcb| |
30 V |
Maximum Collector-Emitter Voltage |Vce| |
30 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
150 |
SKU |
80883 |