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2SC1379
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2SC1379

SKU: 2SC1379
2SC1379 Transistor Silicon NPN CASE: TO126 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Toshiba
Vbr CBO 38
Vbr CEO 18
Max. PD (W) 70
Max. hFE 120
Min hFE 20
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 250u
Polarity NPN
Derate Above 25°C 2.1
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 38 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 766357
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