2SC1385H

SKU: 2SC1385H

2SC1385H Transistor Silicon NPN CASE: TO39 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Hitachi
Vbr CBO	60
Vbr CEO	30
Max. PD (W)	800m
Derate (Amb) (W/°C)	5.3m
hfe	35
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
@VCE (test) (V)	1.1
Oper. Temp (°C) Max.	175
@Ic (A)	300m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	14 pF
Transition Frequency (ft):	400 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	766350

Back