The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC1386H
View detailed images (13)

2SC1386H

SKU: 2SC1386H
2SC1386H Transistor Silicon NPN CASE: TO39 MAKE: Hitachi
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
Product specifications
Equivalent 2SC1386
Type Transistor Silicon NPN
Case TO39
Manufacturer Hitachi
Vbr CBO 70
Vbr CEO 52
Max. PD (W) 800m
Derate (Amb) (W/°C) 5.3m
hfe 30
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 60m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 52 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 766349
Back