2SC1387
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2SC1387

SKU: 2SC1387
2SC1387 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Fujitsu
Vbr CBO 25
Vbr CEO 20
Max. PD (W) 600m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 4.8m
hfe 100
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 40m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 540317
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