| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT33 |
| Manufacturer |
Hitachi |
| Vbr CEO |
30 |
| Max. PD (W) |
500m |
| t(f) Max. (S) |
800n-+ |
| Max. hFE |
100k |
| Min hFE |
2.0k |
| Ic Max. (A) |
300m |
| @Ic (test) (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Mat. |
Silicon Logic |
| Polarity |
NPN |
| Tr Max. (s) |
60n- |
| t(stor) Max. (S) |
350n- |
| Trans. Freq (Hz) Min. |
50M |
| @VCE (test) |
5.0 |
| Oper. Temp (°C) Max. |
150 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.5 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.3 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
3.5 pF |
| Transition Frequency (ft): |
75 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
2000 |
| SKU |
343792 |