| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO131 |
| Manufacturer |
Fujitsu |
| Vbr CBO |
20 |
| Vbr CEO |
10 |
| Max. PD (W) |
300m |
| Derate (Amb) (W/°C) |
2.4m |
| hfe |
100 |
| Ic Max. (A) |
40m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| @VCE (test) (V) |
6.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
4-32 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
20 V |
| Maximum Collector-Emitter Voltage |Vce| |
10 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.04 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
1.8 pF |
| Transition Frequency (ft): |
1500 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
766285 |