| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO218 |
| Manufacturer |
Fujitsu |
| Vbr CEO |
32 |
| Max. PD (W) |
200m |
| C(ob) (F) |
5.0p |
| hfe |
390= |
| Ic Max. (A) |
500m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
250M |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
5 W |
| Maximum Collector-Base Voltage |Vcb| |
45 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.3 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
2.8 pF |
| Transition Frequency (ft): |
2000 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SKU |
766284 |