| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO33 |
| Manufacturer |
Toshiba |
| Vbr CBO |
20 |
| @Freq. (test) |
1.0G |
| @Ic (A) |
3.0m |
| @Ic (A) |
10m |
| Mat. |
Silicon Logic |
| Noise Fig. |
2.0 |
| Oper. Gain Typ (S21) |
9.5 |
| f(osc) Max. (Hz) |
4.5G |
| Polarity |
NPN |
| PD Max. (W) |
400m |
| S11 Deg. (Typ) |
-125 |
| S11 Mag Typ. |
.100 |
| S22 Deg. Typ. |
-58 |
| S22 Mag Typ. |
.614 |
| @VDS (VCE) (test) (V) |
10 |
| Coll. (or drain) Current Max. |
30m |
| @Freq. (test) |
1.0G |
| @VCE (test) |
10 |
| Oper. Temp (°C) Max. |
175 |
| Pinout Equivalence Number |
4-20 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.4 W |
| Maximum Collector-Base Voltage |Vcb| |
20 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
2 V |
| Maximum Collector Current |Ic max| |
0.04 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
1.3 pF |
| Transition Frequency (ft): |
2200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
70 |
| SKU |
585163 |