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2SC1706H
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2SC1706H

SKU: 2SC1706H
2SC1706H Transistor Silicon NPN CASE: TO18 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Hitachi
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 200m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.3m
hfe 30
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 590853
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