2SC1718
View detailed images (12)

2SC1718

SKU: 2SC1718
2SC1718 Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 18
Max. PD (W) 30
Min hFE 10
Ic Max. (A) 4.5
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-20
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 4.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 766116
Back