| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Manufacturer |
Toshiba |
| Case |
TO92 |
| Vbr CBO |
60 |
| Vbr CEO |
50 |
| Max. PD (W) |
400m |
| C(ob) (F) |
3.5p |
| Ic Max. (A) |
150m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
80M |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.4 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.15 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
3.5 pF |
| Transition Frequency (ft): |
80 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
200 |
| SKU |
16580 |