2SC1876H
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2SC1876H

SKU: 2SC1876H
2SC1876H Transistor Silicon NPN CASE: TO39 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Hitachi
Vbr CEO 100
Max. PD (W) 800m
t(f) Max. (S) 600n-+
Min hFE 1.0k
Ic Max. (A) 500m
@Ic (test) (A) 1.0m
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 100n-
R(sat) (Û) 8.0
Derate Above 25°C 5.3m
@VCE (test) 10
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-36
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 3000
SKU 590855
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