2SC1879H

SKU: 2SC1879H

2SC1879H Transistor Silicon NPN CASE: TO39 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Hitachi
Vbr CEO	120
Max. PD (W)	8.0
t(f) Max. (S)	4.2u-+
Min hFE	1.0k
Ic Max. (A)	2.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	500n-
R(sat) (Û)	750m
Derate Above 25°C	53m
@VCE (test)	2.0
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-36
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	8 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	1000
SKU	590856

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