2SC1882H

SKU: 2SC1882H

2SC1882H Transistor Silicon NPN CASE: TO33 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO33
Manufacturer	Hitachi
Vbr CEO	120
Max. PD (W)	8.0
t(f) Max. (S)	500n-
Max. hFE	20k
Min hFE	1.0k
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u+
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	300n-
R(sat) (Û)	500m
t(stor) Max. (S)	1.0u
Derate Above 25°C	53m
Trans. Freq (Hz) Min.	50M
@VCE (test)	2.0
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	4-102
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	8 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	29 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	5000
SKU	590858

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