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2SC1955
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2SC1955

SKU: 2SC1955
2SC1955 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 17
Max. PD (W) 7.5
Max. hFE 200
Min hFE 10
Ic Max. (A) 800m
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 51m
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7.5 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 17 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 585169
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