2SC1959

SKU: 2SC1959

2SC1959 Transistor Silicon NPN CASE: TO92 MAKE: Toshiba

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£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SC1959 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SC1959Y
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	30
Max. PD (W)	500m
C(ob) (F)	7.0p
hfe	240=
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	300M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	100m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	14 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	80950

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