;
Case | TO220 | |
Type | Transistor Silicon NPN | |
Manufacturer | Mitsubishi | |
Vbr CBO | 35 | |
Vbr CEO | 17 | |
Max. PD (W) | 12 | |
Max. hFE | 180 | |
Min hFE | 10 | |
Ic Max. (A) | 2.0 | |
@Ic (test) (A) | 100m | |
Icbo Max. @Vcb Max. (A) | 500u | |
Polarity | NPN | |
Derate Above 25°C | 100m | |
Oper. Temp (°C) Max. | 140 | |
@VCE (V) | 10 | |
Pinout Equivalence Number | 3-14 | |
Surface Mounted Yes/No | NO | |
Maximum Collector Power Dissipation (Pc) | 12 W | |
Maximum Collector-Base Voltage |Vcb| | 36 V | |
Maximum Collector-Emitter Voltage |Vce| | 18 V | |
Maximum Emitter-Base Voltage |Veb| | 4 V | |
Maximum Collector Current |Ic max| | 1 A | |
Max. Operating Junction Temperature (Tj) | 150 °C | |
Transition Frequency (ft): | 175 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 10 | |
SKU | 82375 |