2SC1980

SKU: 2SC1980

2SC1980 Transistor Silicon NPN CASE: TO92 MAKE: Matsushita Electronics

Datasheet

2SC1980 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	150m
Derate (Amb) (W/°C)	1.5m
hfe	260
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	260
SKU	115215

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